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Abstract
The luminescence of n-type modulation doped GaAs/GaAlAs single quantum well structures has been used to probe the relaxation processes in the presence of quasi two dimensional electron gas under high magnetic fields. It was found that the magnetic field induced modulation of the Landau levels separation and occupation strongly alters the relaxation processes. In the Quantum Hall Effect regime the nonradiative relaxation processes through the localized states between Landau levels are strongly enhanced due to the reduction of the screening.
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