Abstract
The localization dynamics of excitons within growth islands of GaAs/Al x Ga1−x As single quantum wells (SQW) have been investigated by time-resolved photoluminescence spectroscopy (TRPL). Several samples with different substrate misorientation and growth interruption times are compared with regard to the photoluminescence (PL) emission dynamics. For monolayer (ML) islands larger than the exciton radius,i.e. long growth interruption, the time evolution of the different PL peaks reflects the transfer of free excitons between growth islands as well as the localization within a single growth island. The samples with shorter growth interruption reveal a much less pronounced PL splitting due to ML islands. The dynamics appears to be mainly determined by exciton localization to thicker ML islands. The density of localization centres is larger for the sample grown on misoriented substrates.
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