Abstract

We have investigated the electronic structures of GaAs/Al(Ga)As and GaAs/AlAs quantum wells by resonance effects of second-harmonic generation. Second-harmonic generation signals manifest themselves in two-photon resonance with the confined 1S and/or 2P excitons in GaAs/Al(Ga)As and ZnSe/ZnS quantum wells. The assignment of the resonance is directly determined from comparison to the results of one-photon and two-photon absorption data. From the energy splitting of the 1S and 2P exciton levels, the exciton binding energies can be determined. There is a significant increase in the binding energy as compared to that in bulk materials. This increase is caused by the exciton confinement effect.

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