Abstract
In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass μ = μ(a) is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy Eex(a) in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii aex, the exciton binding energy Eex(a) is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.
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