Abstract
Interband transitions of pseudomorphic GaN/AlxGa1−xN quantum wells are analysed theoretically with respect to the piezoelectric field utilizing a 6 × 6 Rashba–Sheka–Pikus (RSP) Hamiltonian. Band structure modifications due to the built-in Stark effect explain a shift of the emission peak in GaN/Al0.15Ga0.85N of up to 400 meV. Quantum well exciton binding energies are calculated by the variational method and are discussed in terms of spatial separation of electrons and holes by the built-in electric field, as well as the interaction between valence subbands.
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