Abstract
We propose the first tentative calculation of exciton binding energies and oscillator strengths in GaAs 1-x N x -GaAs quantum wells with nitrogen contents below x = 0.05. Our model is based on the envelope function approximation and permits us to determine the excitonic properties of GaAs-GaAsN single quantum wells with a variational and self-consistent process for marginal type I or type II potentials due to the very small valence band offset for this combination. We conclude that this is a type I system.
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