Abstract
The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and nonintentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find h s 350 ps at T = 1.7 K in the ZnO epilayer. The strong energy and temperature dependences of the photoluminescence polarization dynamics are well explained by the fast free exciton spin relaxation time and the ionization of bound excitons.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
