Abstract
AbstractBy investigations of low‐temperature photoluminescence (PL) spectra of InSe crystals the nature of emission lines in the region of indirect exciton transitions is determined and the energy diagram of optical direct and indirect transitions is offered. The presence in γ‐InSe of regions containing stacking faults results in the appearance of a fine structure in the PL spectra of an n = 1 exciton state. Within the framework of a “resonant exciton” model the causes of the growth of integrated intensity in the absorption spectra of an n = 1 exciton state are discussed.
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