Year-end Sale % OFF 
Abstract
We report on optical studies of relaxation processes in self-organized InAs/GaAs quantum dots (QDs). Photoluminescence excitation spectra reveal a series of almost equidistant lines. Their energy with respect to the detection energy does not depend on QD size. The energy separations are close to the LO phonon energy of 32.1 meV estimated numerically for strained pyramid-like InAs QDs. Carrier relaxation is found to proceed by multiphonon processes involving QD and wetting layer LO phonons, and an interface mode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
