Excited-state band mapping and momentum-resolved ultrafast population dynamics in In/Si(111) nanowires investigated with XUV-based time- and angle-resolved photoemission spectroscopy

Abstract

We investigate the excited state electronic structure of the model phase transition system In/Si(111) using femtosecond time- and angle-resolved photoemission spectroscopy (trARPES) with an XUV laser source at 500 kHz . Excited state band mapping is used to characterize the normally unoccupied electronic structure above the Fermi level in both structural phases of indium nanowires on Si(111): the metallic (4x1) and the gapped (8x2) phases. The extracted band positions are compared with the band structure calculated using density functional theory (DFT) within both the LDA and GW approximations. While good overall agreement is found between the GW calculated band structure and experiment, deviations in specific momentum regions may indicate the importance of excitonic effects not accounted for at this level of approximation. To probe the dynamics of these excited states, their momentum-resolved transient population dynamics are extracted. The transient intensities are then simulated by a spectral function determined by a state population employing a transient elevated electronic temperature as determined experimentally. This allows the momentum-resolved population dynamics to be quantitatively reproduced, revealing important insights into the transfer of energy from the electronic system to the lattice. In particular, a comparison between the magnitude and relaxation time of the transient electronic temperature observed by trARPES with those of the lattice as probed in previous ultrafast electron diffraction studies imply a highly non-thermal phonon distribution at the surface following photo-excitation. This suggests the energy from the excited electronic system is initially transferred to high energy optical phonon modes followed by cooling and thermalization of the photo-excited system by much slower phonon-phonon coupling.