Abstract
The excited electronic states on Si(0 0 1) surface at the initial stage of oxidation have been studied by time-resolved two-photon photoemission (2PPE) spectroscopy. Transient 2PPE intensity from the conduction band minimum (CBM) shows the maximum at about 1 ps after a direct excitation from bulk valence- to conduction-band. This is due to accumulation of photo-excited electrons to CBM by the intraband scattering. The 2PPE signal around 0.6 eV below CBM shows a maximum intensity at around 10 ps. It can be considered that this 2PPE intensity originates from the unoccupied state derived from surface oxide. Electrons at both CBM and oxide state show longer lifetimes as oxidation proceeds.
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