Abstract
A spectroscopic study of the shallow Si donor and its bound exciton (BE) confined in narrow GaAs/Al x Ga 1-x As quantum wells (QW's) has been performed. The electronic structure has been investigated by means of selective photoluminescence and photoluminescence excitation spectroscopy. The energy separation between the ground state and the excited state of the confined Si donor has been monitored by means of two-electron transitions (TET's) of the confined-donor BE. It is concluded in this study that the TET satellite originates from the 1s-2s transition, in contrast to the bulk case, where the 1s-2pt and 1s-2po donor transitions are also strong
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