Abstract
Terahertz emitters and detectors made from AIIIBV semiconductors were investigated by means of a tunable wavelength laser system. THz excitation spectra of InAs and InSb has been investigated. It was shown that subsidiary valley position can be determined quite accurately. As terahertz detectors, the photoconductors manufactured from GaAs and InGaAs epitaxial layers grown by MBE at low substrate temperatures were investigated. It was revealed that the investigated materials can be used for manufacturing THz optoelectronic components sensitive to 1 μm and 1.5 μm wavelength laser radiation, respectively.
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