Excitation process and photoluminescence properties of Tb 3+ and Eu 3+ ions in SnO 2 and in SnO 2: Porous silicon hosts

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Tin oxide (SnO 2)-layers-doped terbium and europium ions are elaborated by the sol–gel method on silicon substrates. After annealing at 500 °C, the transmission electron microscopy revealed a crystallization of tin oxide. The emission properties of rare-earth in SnO 2 are studied systematically against temperature annealing and Tb 3+ concentration. The PL spectrum is optimal after annealing at 900 °C and the corresponding photoluminescence (PL) decay is nearly exponential, showing that the sample is homogenous and the PL process can be described by two levels system. The concentration effect shows a quenching of the PL intensity for Tb 3+ concentration above 4%. From the investigation of the decay rate from the 7F 5 state within terbium concentration, we show that self-quenching is insured by dipole – dipole interaction. The evolutions of both PL intensity and PL lifetime versus temperature are studied. The PL intensity and PL lifetime are enhanced by deposing SnO 2:Tb 3+ and SnO 2:Eu 3+ in porous silicon. We show that an efficient excitation transfer from Si nanocrystallites to RE ions can occur.