Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

Abstract

Detailed excitation power dependence of PL intensity from the near surface quantum wells and wires passivated by the Si ICL technique were measured in order to get quantitative information on the properties of the passivated surfaces. The conventional PL analysis assuming constant surface recombination velocity is shown to be utterly inadequate. A novel excitation power dependent PL theory was developed and applied to the computer analysis of PL behavior of near surface quantum wells. It is shown that the novel PL theory can explain the experimentally observed behavior very well. The Si ICL technique is concluded to be extremely powerful in drastically reducing the surface state density.