Abstract
Photoluminescence (PL) efficiency plots versus laser excitation power are presented for bare and Na2S treated n-GaAs. The plots demonstrate an increase in PL quantum yield with increasing excitation power density for both samples. The PL enhancement observed in the Na2S treated sample is presented and is shown to depend strongly on excitation power density. Application of the deadlayer model to the analysis of low power PL efficiency from bare GaAs indicates that surface electron-hole recombination is significantly slower than surface minority carrier trapping.
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