Abstract
Effects of Yb codoping on photoluminescence of Er 3+ ions at room temperature in SiO 2 films thermally grown on silicon are investigated. We demonstrate that for an excitation wavelength of 488 nm Yb ions act as efficient sensitizers of the 4 I 13/2– 4 I 15/2 emission of Er 3+ ions. We have found that for the fixed dose of Yb the Er 3+ intensity is directly proportional to the Er concentration. Models of the mechanisms responsible for sensitization are discussed. It is shown that the Yb/Er concentration ratio of 0.5–2 is optimum for the dopant densities of 2–4×10 20 cm −3.
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