Abstract

The growing need for classical as well as quantum optical sensing places increasingly stringent requirements upon the desired characteristics of the engendered fields. Specifically, achieving superior field enhancement plays a critical role in applications ranging from chem-bio sensing, Raman and infrared spectroscopies to ion trapping and qubit control in emerging quantum-information science. Due to their low optical losses and ability to exhibit resonant field enhancements, all dielectric multilayers are emerging as an optical material system not only useful to classical photonics and sensing but also of potential to be integrated with quantum materials and quantum sensing. The recently introduced concept of zero-admittance layers [1] within dielectric multilayer materials, enables the creation and control of resonant fields orders of magnitude larger than the exciting field. Here, invoking the zero-admittance concept, we design, fabricate, and characterize an all-dielectric nonabsorbing stack and demonstrate the engendered huge field enhancement. Describing the fields in terms of Bloch surface waves, we connect the surface field to the semiperiodicity in the dielectric domains of the stack. As a specific application of the resonant field, we propose and demonstrate refractive-index sensing for the detection of trace amounts of an analyte. The results include a quantification of the sensitivity of the device with respect to the profile of the exciting field. The experimental results are shown to be in good agreement with theoretical calculations.

Highlights

  • Compared to the many effects that arise from lightmatter interactions, collective electronic effects in specific metals via photon or electron excitation of surface plasmons [2,3,4,5,6,7,8,9,10,11,12,13,14], generated much interest in the early efforts to achieve confined, enhanced, and/or sensitive fields

  • An in situ optical thickness monitor (Bühler OMS 5000) is used to minimize errors in the thickness of each deposited layer with respect to their designed values. This monitoring strategy can not be performed directly on the zeroadmittance layers (ZAL) sample deposited on the prism, which works in the total internal reflection (TIR) regime

  • Our parametric studies of the ZAL based upon the characteristics of the reflected beam profile enable evaluation of the sensitivity of planar ZAL multilayers

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Summary

INTRODUCTION

Compared to the many effects that arise from lightmatter interactions, collective electronic effects in specific metals via photon or electron excitation of surface plasmons [2,3,4,5,6,7,8,9,10,11,12,13,14], generated much interest in the early efforts to achieve confined, enhanced, and/or sensitive fields. The planar arrangement proved useful since the field bound to the metal surface, while decreasing exponentially with distance to surface, sensitively depends upon the dielectric function of the bounding medium. These properties were found important in several applications, such as the so-called surface plasmon resonance (SPR) sensing. The realization of new resonant stacks designed and optimized through ZAL, is expected to provide excellent candidates for high-sensitivity optical sensors. Far, such stacks have not been fabricated or characterized.

ZERO-ADMITTANCE LAYERS
Propagating and evanescent fields at surfaces of periodic material domains
Field enhancement for sensing applications
Calculation of the field enhancement
Theory of dielectric multilayers and transmission lines
DIVERGENT BEAM REFLECTED BY A ZAL STACK
Analytical calculation
Numerical calculation
FABRICATION OF THE ZAL STACK
METROLOGY OF THE REFLECTED BEAM WAVE FRONT
SENSITIVITY OF THE SENSING MECHANISM
Findings
CONCLUSION
Full Text
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