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Abstract
A microscopic theory for the optical absorption and gain spectra of InN quantum-dot systems is used to study the combined influence of material properties and interaction-induced effects. Atomistic tight-binding calculations for the single-particle properties of the self-assembled quantum-dot and wetting-layer system are used in conjunction with a many-body description of Coulomb interaction and carrier phonon interaction. We analyze the carrier-density and temperature dependence of strong excitation-induced energy shifts of the dipole-allowed quantum-dot transitions.
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