Abstract
Transient measurements of the excitation efficiency were performed in ZnS-based a.c. driven electroluminescent devices grown by atomic layer epitaxy. The results evidence the build-up of a bulk space-charge in the semiconductor layer from the first pulse on, even at low levels of the transferred charge (about ). At these levels, the semiconductor - insulator interfaces contribute to charge carrier injection and provide primary electrons for multiplication in the bulk. Models of space-charge generation by field emission from the bulk only are not compatible with experimental data. The multiplication rates seem rather high ; however, filamentary conduction may lead to an overestimation of .
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