Abstract
Abstract We present a detailed analysis of the second-order correlation behavior of photons emitted from an InGaN QD in a photonic horn structure in order to discuss the excitation, emission, and environmental dynamics that impact the emission. We report the observation of a clear saturation in the antibunching decay rate as the excitation power is increased. We describe the saturation with a simple model describing a saturating excitation path, possibly via inefficient carrier relaxation into the QD emitting state.
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