Abstract
We report the projection dry etching of GaAs using an excimer laser and HBr etching gas. Present experiments use photochemically generated reactants, which are spatially confined by gas phase collisions. Pattern transfer is accomplished by 1:1 imaging of the excimer laser light directly onto a GaAs substrate in a reaction cell filled with HBr gas. Resolution down to the laser beam image size is achieved through the addition of buffer gases.
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