Abstract
Abstract In this paper a new high vacuum apparatus for laser chemical vapor deposition (LCVD) of tungsten on silicon is presented. It features a fast sample transfer system and a nitrogen window purge to prevent tungsten deposition on the laser entrance and exit windows. Tungsten films grown on silicon in this reactor, using WF 6 and H 2 as reaction gasses and an ArF (193 nm) excimer laser as activation source, are shown to have near bulk resistivity (9.5 μΩ cm at 400°C). The W coverage increases linearly with laser-pulse frequency and growth appears to be thermally activated at fixed pulse frequency. RBS spectra indicate that thickness variations are considerably smaller for films formed by LCVD than for films formed by purely thermal CVD.
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