Excimer laser-induced damage in bilayer carbide/polyimide systems

Abstract

The effect of XeCl (308 nm, 20 and 75 ns) excimer laser ablation of 30–40 nm thick carbide layers (TiC, Cr3C2, B4C) deposited on 2000 nm polyimide in the laser fluence range 10–1300 mJ cm−2 has been investigated. The surface modification in the ablated spot areas has been observed. At fluences of 100–250 mJ cm−2, complete removal of the carbide layers was achieved without damage to the bottom polyimide layer. Ablation at fluences above 250 mJ cm−2 caused interface damage and a different polyimide behaviour under RIE in oxygen. Copyright © 2000 John Wiley & Sons, Ltd.