Abstract
The present paper is devoted to experimental identification of the excimer laser-induced etching mechanism of silicon under “high” chlorine pressures (30–160 Torr). Experimental results on pulsed KrF excimer laser etching of silicon in chlorine atmosphere by a sequence of single and double pulses are presented. The etch rate dependencies on time delay between pulses in the “double” are discussed. Two mechanisms of etching are considered. The first is laser-stimulated thermal desorption of chemisorbed layer, formed between laser pulses. The second one is direct chemical reaction of chlorine molecules with a silicon surface thermally activated by laser heating. On the basis of the analysis of experimental results it is concluded that direct pyrolytic chemical reaction of chlorine with a hot silicon surface heated by excimer laser pulse radiation (pulse duration 17.5 ns) gives a negligible contribution to the total etch rate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
