Abstract
Carrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2×1014/cm2 at 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ=728 nm) or a XeCl excimer laser (λ=308 nm). Dye-laser annealing through a ∼55-nm-thick Si3N4 cap consistently produced higher activations than excimer-laser annealing with or without the cap. Carrier densities were measured by phonon-Raman and plasmon-Raman scattering.
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