Abstract
Exchange interactions between the holes confined in arrays of strained quantum dots subject to compressive and tensile strain are shown to lead to a ferrimagnetic arrangement of magnetic moments. Using the example of strained InxGa1−xAs quantum dots on InP substrate it is shown how the magnetic properties of semiconductor material can be engineered without resorting to doping with magnetic ions. The transition temperature is estimated to be of the order of 25 K. Potential applications in information storage and processing are considered.
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