Abstract
We report on the study of exchange enhancement of g-factor in 2D electron gas in n-type narrow-gap semiconductor heterostructures that feature a strong nonparabolicity of electric subbands. We demonstrate that exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to subband nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and shape of the g-factor oscillations are governed by both the screening of electron-electron interaction and the Landau level width. The enhanced g-factor values calculated for 2D electron gas in InAs/AlSb quantum well heterostructures are compared with previous experimental magnetotransport data.
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