Abstract
Direct exchange interaction allows spins to be magnetically ordered. Additionally, it can be an efficient manipulation pathway for low-powered spintronic logic devices. We present a novel logic scheme driven by exchange between two distinct regions in a composite magnetic layer containing a bistable canted magnetization configuration. By applying a magnetic field pulse to the input region, the magnetization state is propagated to the output via spin-to-spin interaction in which the output state is given by the magnetization orientation of the output region. The dependence of this scheme with input field conditions is extensively studied through a wide range of micromagnetic simulations. These results allow different logic operating modes to be extracted from the simulation results, and majority logic is successfully demonstrated.
Highlights
Direct exchange interaction allows spins to be magnetically ordered
Since complementary metal oxide semiconductor (CMOS) scaling, dictated by Moore’s Law[2], will reach its limits in the following decade[3], there is a need for logic components that can operate at high frequencies, be extremely compact and consume ultra-low power[4]
Among the most prominent concepts investigated for beyond-CMOS applications is the Nano-Magnetic Logic (NML) that was first introduced by Cowburn et al10. and Csaba et al.[11]
Summary
Direct exchange interaction allows spins to be magnetically ordered It can be an efficient manipulation pathway for low-powered spintronic logic devices. By applying a magnetic field pulse to the input region, the magnetization state is propagated to the output via spin-to-spin interaction in which the output state is given by the magnetization orientation of the output region The dependence of this scheme with input field conditions is extensively studied through a wide range of micromagnetic simulations. The R1/R2 would become exchange coupled and the states 0/1 and 1/0 would not be allowed any more (for more details we refer the reader to the Supplementary Material) To avoid such a strong coupling, we set the interconnect length to 40 nm, which corresponds to ~2δ
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