Abstract

Direct exchange interaction allows spins to be magnetically ordered. Additionally, it can be an efficient manipulation pathway for low-powered spintronic logic devices. We present a novel logic scheme driven by exchange between two distinct regions in a composite magnetic layer containing a bistable canted magnetization configuration. By applying a magnetic field pulse to the input region, the magnetization state is propagated to the output via spin-to-spin interaction in which the output state is given by the magnetization orientation of the output region. The dependence of this scheme with input field conditions is extensively studied through a wide range of micromagnetic simulations. These results allow different logic operating modes to be extracted from the simulation results, and majority logic is successfully demonstrated.

Highlights

  • Direct exchange interaction allows spins to be magnetically ordered

  • Since complementary metal oxide semiconductor (CMOS) scaling, dictated by Moore’s Law[2], will reach its limits in the following decade[3], there is a need for logic components that can operate at high frequencies, be extremely compact and consume ultra-low power[4]

  • Among the most prominent concepts investigated for beyond-CMOS applications is the Nano-Magnetic Logic (NML) that was first introduced by Cowburn et al10. and Csaba et al.[11]

Read more

Summary

Introduction

Direct exchange interaction allows spins to be magnetically ordered It can be an efficient manipulation pathway for low-powered spintronic logic devices. By applying a magnetic field pulse to the input region, the magnetization state is propagated to the output via spin-to-spin interaction in which the output state is given by the magnetization orientation of the output region The dependence of this scheme with input field conditions is extensively studied through a wide range of micromagnetic simulations. The R1/R2 would become exchange coupled and the states 0/1 and 1/0 would not be allowed any more (for more details we refer the reader to the Supplementary Material) To avoid such a strong coupling, we set the interconnect length to 40 nm, which corresponds to ~2δ

Methods
Results
Conclusion
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call