Exchange bias effects in submicron antiferromagnetic-ferromagnetic dots prepared by nanosphere lithography

Abstract

Exchange bias effects have been observed in an array of submicron antiferromagnetic-ferromagnetic dots prepared by nanosphere lithography. The angular dependences of the exchange bias field HE, coercivity HC, and squareness ratio MR/MS of the array of dots have been measured and compared with those of a continuous film prepared under the same conditions. An HE enhancement of around 30% is observed along the field-cooling direction in the dots. The possible mechanisms responsible for this enhancement are discussed. Moreover, magnetic imaging reveals that complex magnetization reversal mechanisms occur in the nanostructures, which cause significant differences in the shape of the hysteresis loops, when compared to the exchange biased continuous films.