Excess noise of the silicon surface barrier detectors

Abstract

From our experiments the following conclusions follow: i) The value of a in the l/fa law lies within the intervala e (0.6, 1.0). ii) The detectors featuring low reverse currentIc havea ≈ 1.0. iii) The cutoff frequency of the noise characteristicfc is at low frequency compared with the using frequency band of the detector. iv) The excess noise is given by generation-recombination process in the volume of the space — charge region of the sample.