Excess noise of 850-nm silicon avalanche photodiodes fabricated using CMOS process

Abstract

This study analyzes the effect of biases in the deep n-well on excess noise in 850-nm Si avalanche photodiodes (APDs). Si APDs were fabricated in standard 0.18-μm CMOS technology. The extra bias in the deep n-well can effectively eliminate the slow photo-generated carriers from the substrate and improve bandwidth and excess noise.