Excess noise measurements in ion-implanted silicon resistors : H. R. Bilger, J. L. Tandon and M.-A. Nicolet. Solid St. Electron.17, 599 (1974)

Abstract

In this paper we shall discuss the required polysilicon characteristics to produce free-standing mechanical structures such as accelerometers. Protection of the metallization and electronics during the removal of the sacrificial oxide will be discussed along with drying techniques. A process for producing mechanical structures with active CMOS transistors will be presented along with a prototype accelerometer. Tumbletest results for the accelerometer show that even with external, off-chip electronics, these devices can easily distinguish ± 1g. Capacitancevoltage (CV) curves for the accelerometers are shown as a quick way of checking these devices using standard integrated-circuit test instruments. Analysis of the current-voltage (IV) characteristics of both the n-channel and p-channel transistors shows that the additional processing has no effect on the threshold voltage but does significantly increase the channel shortening.