Abstract
Avalanche photodiodes (APDs) are used in high-speed data communication and light detection and ranging (LIDAR) systems due to their high sensitivity and high speed. However, InAlAs and InP based APDs have relatively high excess noise because they have relatively similar electron and hole ionization coefficients (α and β respectively). Here, we report on an ultra-low excess noise material Al<sub>0.85</sub>Ga<sub>0.15</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> (hereafter AlGaAsSb) with a k value (β/α) of 0.01. The excess noise and multiplication measurements were performed on both random alloy (RA) p<sup>+</sup>-i-n<sup>+</sup> and digital alloy (DA) grown p<sup>+</sup>-i-n<sup>+</sup> diodes with depletion regions of 1020nm and 890nm respectively. The excess noise was found to be broadly similar in both RA and DA grown structures.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
