Abstract
The noise characteristics of semiconducting BaSrTiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> were investigated as a function of frequency, bias current, and volume of the sample. It was found that the noise is approximately inversely proportional to the volume of the sample and the frequency dependence is a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/f</tex> behavior. This and other results have implications regarding an optimized use of this material for temperature-sensing applications.
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