Abstract

This work is devoted to theoretical and experimental investigation of the problem of excess noise and deep level defects diagnostics in semiconductor barrier structures. Different models of deep energy levels recharging and relaxation processes in semiconductor barrier structures are discussed. The activation-drift model of low-frequency noise generation in physically barrier layers with the influence of the Frenkel effect has been developed. Experimental studies of deep levels in the semiconductor structures and devices with taken into account the Frenkel effect allows predicting more precisely the reliability and performance characteristics.

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