Abstract
Excess current/capacitance behavior was observed on the Ag:Ca/P3HT:PCBM/PEDOT:PSS/ITO structure and the associated mechanism(s) were identified by performing both dc current–voltage (I–V) and ac capacitance–conductance–voltage (C/G–V) measurements in dark and light exposure, respectively. The excess current/capacitance issue, originated owing to a minority carrier injection, has manifested itself as conductivity modulation in I–V and decrease in capacitance in C–V at a sufficiently large forward bias. Satisfactory analysis in I–V as transport property and C(G)–V as storage feature were carried out on Ag:Ca/P3HT:PCBM/PEDOT:PSS/ITO structure.
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