Abstract
In this paper we offer a new method and technique for the separate measuring of both excess electron and excess hole lifetimes at temperatures from 77 K to 300 K. The contactless non-destructive method is based on simultaneous irradiation of the sample by CO2-laser probe beam (λz = 10.6 Μm) and by the beam of a wavelength-tunable (5.3–6.3 Μm) CO-laser which is generating electron-hole pairs. The influence of the processing technology on charge carrier lifetimes in InSb is studied by this method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
