Abstract
Many important aspects of transport and device operation in amorphous semiconductor electronics are characterised by a broad distribution of relaxation processes. In this paper, the two most important of these phenomena are reviewed: the anomalous dispersion in excess carrier population, and the slow non-exponential variation of thin-film transistor characteristics during and after voltage stressing. It is shown that in each case the behaviour is intimately related to the disordered nature of the material, via the variations in local site energy and other parameters which this yields.
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