Abstract
Exceptionally pure epitaxial diamond layers have been grown by microwave plasma chemical vapour deposition, which have low boron doping, from 5 × 1014 to 1 × 1016 cm−3, and the compensating n-type impurities are the lowest reported for any semiconducting diamond, <3 × 1013 cm−3. The hydrogen impurities that bind with the boron making them electrically inactive can be significantly reduced by baking the diamond to >700 °C for ∼1 s in air. Schottky diodes made on these epitaxial diamond films have breakdown voltages >6 kV, twelve times the highest breakdown voltage reported for any diamond diode and higher than any other semiconductor Schottky diode.
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