Abstract
GaN nanowires with P doping were synthesized via a simple thermal evaporation process. The P-doped GaN nanowires have average diameters of approximately 100 nm and lengths up to tens of micrometers. Scanning electron microscope and high-resolution field-emission transmission electron microscope analyses revealed that P doping results in a rough surface morphology of GaN nanowires. Field-emission measurements showed that P doping effectively decreases the turn-on field of GaN nanowire to 5.1 V/mum, holding promise of application as an electron emitter. The rough surface is responsible for enhancement of the field-emission properties of GaN nanowires.
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