Abstract
Characteristics of metal-ferroelectrics-metal (MFM) capacitors and meta -ferroelectrics-insulator-semiconductor (MFIS) diodes with poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] copolymer films thinner than 100 nm were investigated. The films were prepared by spin cast process and were annealed at 140 degrees C in air for crystallization. The ferroelectric properties are equivalent to those of oxide ferroelectrics, even under low voltage or high frequency operation.
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