Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance

Abstract

The excellent electrostatic discharge (ESD) resistance of InGaN-light-emitting diodes is achieved by enhancing the internal capacitance. By inserting three pairs of 140-/40-nm u/n-GaN ( $5\times 10^{18}$ cm $^{\mathrm {-3}})$ layers on the low doped n-spacer layer before the active region, the internal capacitance was raised from 50 to 103 pF, while the human body model ESD pass yield at −8000 V was increased from 40% to 98%. A lower energy dispassion on the devices due to the enhanced internal capacitance leads to the excellent ESD resistance.