Abstract
To improve the performance of GaN‐based green micro‐light emitting diodes (μ‐LEDs) array, a modular‐architected p‐type region, which consists of polarization‐induced graded AlGaN and Al0.2Ga0.8N/GaN superlattices (SLs), is proposed to enhance p‐type conductivity. The designed p‐type structure shows a hole concentration of 1.7 × 1018 cm−3 which leads to an excellent conductivity of 2.48 Ω−1 cm−1. As a result, the fabricated μ‐LEDs array with 16 × 16 pixels exhibits a differential resistance of 7 Ω and a light output power of 7.9 mW, which is about 4 times in magnitude lower and 2 times in magnitude higher than those of μ‐LEDs array equipped with the p‐type layer using graded AlGaN and p‐GaN, respectively. Furthermore, in a visible light communication test, it exhibits a data rate improvement of 35%, with a value of 1.03 Gbps. A new approach is provided to enhance the p‐type conductivity of III‐nitride devices, which is definitely promising to improve their performance and expand their applications.
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