Abstract
Epsilon near zero (ENZ) structures are of increasing interest with developments initially directed at metal-dielectric material combinations and recently extended to doped semiconductor-dielectric combinations - all in an effort to drive the permittivity and wave number of the structure near zero. Of further interest is the effective theoretical characterization of these multi-layered material structures. We investigate increasing the number of layers - from one to four - of a visible ENZ design structure. Theoretical predictions are compared with experimental material properties collected from ellisometry; the region where effective medium theory breaks down and optical thin film analysis succeeds are examined.
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