Abstract
AbstractThe optical response speed of a GaAs MESFET photodetector with an HEMT structure was measured via a correlation method. A high optical response of a full width at half‐maximum (FWHM) 18 ps was obtained. This response speed includes the contribution of the FWHM of the pulse used in the measurement. To estimate the response speed characteristic to the device, the obtained response speed is divided into the portion due to the carrier transit time and that due to the stray capacitance. From the studies of both of these contributions, the contribution by the optical pulse was separated. As a result, the response speed characteristic to the device is estimated to be 12 ps. Also, it is found that the response speed can be reduced to about 8 ps by the reduction of the gate width.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
