Abstract
AbstractA mathematical model has been developed of the reactor used by Larsen et al. [1] to study the kinetics of gallium arsenide MOCVD.- Two different surface reactions were considered as the rate-limiting step in film growth below 500°C: (1) the desorption of methyl radicals from adsorbed trimethylgallium, and (2) the reaction of CH3 and H groups from adsorbed trimethylgallium and arsine to make methane. The latter step is consistent with the experimental results. It explains the rapid acceleration of the precursor decomposition rates when they are fed together to the reactor. It also explains why methane is the only hydrocarbon generated from trimethylgallium and arsine decomposition in deuterium at V/Ill ratios greater than 1.0.
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