Abstract
In this study, we used Mn ion implantation following with helium ion irradiation to prepare GaMnAs thin film. Extended X-ray absorption fine structure, and X- ray absorption spectrum were applied to analyze the crystalline of Mn implanted GaAs layer. And the results showed implanted Mn ions stand on the substitutional site of Ga ions of GaAs lattice. Also from X-ray absorption spectrum, we confirmed the electronic valence state of Mn ions in the implanted layer were 2+.
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