Abstract
The structural properties of amorphous GaSe9 thin films produced by vacuum evaporation were investigated using the EXAFS technique and the cumulant expansion method. Structural parameters such as average coordination numbers and interatomic distances, disorder and asymmetry of the partial pair distribution functions gij(r) were obtained and compared to those found in the amorphous GaSe9 alloy used as precursor in the evaporation technique. Results indicate that structural units present in GaSe9 evaporate without dissociation, showing the stability of this alloy.
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