EXAFS and XPS studies of germanium and gallium arsenide nanostructures in porous aluminum oxide matrices

Abstract

The local atomic structure and chemical bonds of germanium and gallium arsenide, specimens of an isoelectronic series, are studied. Both materials are obtained via thermal evaporation of the materials’ powders onto porous matrices of anodic aluminum oxide and polycorr substrates. The mechanism responsible for the formation of local atomic structure is shown to be almost identical for Ge and GaAs. When compared to the films on polycorr surfaces, changes in local atomic structure are observed in the material obtained in porous matrices due to the difference between the mechanisms of condensation on rough and smooth surfaces.